MOSFET N/P-CH 40V 6.2/4.4A 8SOIC FDS4897C
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Description:
MOSFET N/P-CH 40V 6.2/4.4A 8SOIC
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
8-SOIC(0.154,3.90mm wide)
DataSheet
FDS4897C(FET, MOSFET)ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory15601,Price reference "real-time change" China/Hongkong。 FDS4897C package/specs, Download FDS4897C、Datasheet。